NE5511279A-A Fiches technique(PDF) - California Eastern Labs

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NE5511279A-A Fiches technique (PDF) - California Eastern Labs

NE5511279A-A Datasheet PDF - California Eastern Labs


No de pièce	NE5511279A-A

Télécharger	NE5511279A-A Télécharger

Taille du fichier	297.41 Kbytes

Page	4 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

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Description

NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NE5511279A-A Datasheet (PDF)

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Télécharger Fiches technique

NE5511279A-A Datasheet PDF - California Eastern Labs


No de pièce	NE5511279A-A

Télécharger	NE5511279A-A Click to download

Taille du fichier	297.41 Kbytes

Page	4 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Description	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NE5511279A-A Fiches technique (HTML) - California Eastern Labs

NE5511279A-A Datasheet HTML 1Page - California Eastern Labs

NE5511279A-A Datasheet HTML 2Page - California Eastern Labs

NE5511279A-A Datasheet HTML 3Page - California Eastern Labs

NE5511279A-A Datasheet HTML 4Page - California Eastern Labs

Numéro de pièce similaire - NE5511279A-A

Fabricant	No de pièce	Fiches technique	Description
NEC	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5511279A-T1	272Kb / 10P	SILICON POWER MOS FET 2003
California Eastern Labs	NE5511279A-T1-A	296Kb / 4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NEC	NE5511279A-T1A	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5511279A-T1A	272Kb / 10P	SILICON POWER MOS FET 2003

Description similaire - NE5511279A-A

Fabricant	No de pièce	Fiches technique	Description
NEC	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
California Eastern Labs	NE5511279A	296Kb / 4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
NEC	NE5520279A	166Kb / 7P	NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs	NE552R479A	495Kb / 9P	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
	NE5520379A	390Kb / 9P	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
	UPD5702TU	176Kb / 4P	NECs 2.4 GHz Si LD MOS POWER AMPLIFIER
Mitsubishi Electric Sem...	2SK2975	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
Mitsubishi Electric Sem...	2SK2974	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)

À propos de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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